论文标题
近场纳米成像的双门控石墨烯设备
Dual-gated graphene devices for near-field nano-imaging
论文作者
论文摘要
基于石墨烯的异质结构显示出各种现象,这些现象可通过静电大门强烈调节。单层石墨烯(MLG)表现出可调的表面等离子体偏振子,如扫描纳米含量的实验所示。在双层石墨烯(BLG)中,电子间隙由垂直位移场诱导。预计间隙BLG显示出异常的效果,例如等离子体扩增和寿命明显大于MLG的结构域壁等离子体。此外,在扭曲的石墨烯结构中已经观察到了对位移场高度敏感的各种相关电子相。但是,在纳米红外实验中应用垂直位移场直到最近才成为可能(参考文献1)。在这项工作中,我们充分表征了两种实现纳米镜的方法兼容的顶级门的方法:biLayer $ \ text {mos} _2 _2 $和MLG。我们对两种类型的结构进行纳米含量成像,并评估其优势和劣势。我们的工作为基于石墨烯的异质结构中相关现象和等离子效应的全面近场实验铺平了道路。
Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible (Ref. 1). In this work, we fully characterize two approaches to realizing nano-optics compatible top-gates: bilayer $\text{MoS}_2$ and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.