论文标题
具有超低阻力隧道连接的全MOCVD生长的氮化岩二极管
All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions
论文作者
论文摘要
我们仔细研究了三个重要的影响，包括后生激活退火，三角洲（δ）剂量和p+gan层厚度，并在实验上证明了它们对使用隧道连接（TJ）的P-P-Contact的GAN P-N同型二极管二极管的影响。 P-N二极管和TJ结构是通过金属有机化学蒸气沉积（MOCVD）单一生长的。通过优化镁（MG）激活的退火时间和温度，并在TJ接口处的供体和受体引入δ剂量，可以显着改善电气性能。对于连续生长的全MOCVD GAN同型TJ，分别以20 A/CM2和100 A/CM2的电流密度分别获得了158 mV和490 mV的超低向前电压惩罚。具有工程化TJ的P-N二极管在5 ka/cm2时显示出1.6 x10-4Ω-CM2的记录归一化差分电阻。
We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction diodes with a tunnel junction (TJ)-based p-contact. The p-n diodes and TJ structures were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing time and temperature for magnesium (Mg) activation and introducing δ-doses for both donors and acceptors at TJ interfaces, a significant improvement in electrical properties is achieved. For the continuously-grown, all-MOCVD GaN homojunction TJs, ultra-low forward voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A/cm2 and 100 A/cm2, respectively. The p-n diode with an engineered TJ shows a record-low normalized differential resistance of 1.6 x 10-4 Ω-cm2 at 5 kA/cm2.
