论文标题
在高码Si：GA中观察到的超导阶段，用于低温电路应用
Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications
论文作者
论文摘要
用甘油（GA）过度填充已建立为观察硅（SI）超导性的途径。相对较大的临界温度（t $ _ {\ rm c} $）和磁场（b $ _ {\ rm c} $）使此阶段对低温电路应用程序有吸引力，尤其是对于可扩展的混合超导体 - 体积 - 体积 - 驱动器平台。然而，在millikelvin温度下，Si：GA超导的鲁棒性尚待评估。在这里，我们报告了Si：ga的T $ _ {\ rm c} $以下的重进入电阻过渡的存在，其强度强烈依赖于退火后沉淀在植入的Si中的GA簇的分布。通过监测植入能和通力的广泛参数空间的重入抗性，我们确定条件可以显着改善GA簇的相干耦合，因此，即使在低至20 〜MK的温度下，也消除了连续的转变。
Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{\rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK.
