论文标题
通过综合拉曼光谱法进行硅光子的应力测量
Stress measurements in silicon photonics by integrated Raman spectroscopy
论文作者
论文摘要
光子和电子集成电路的复杂3D整合尤其是携带光子路线图并应对挑战，但涉及机械应力，这通常是对光学组件的行为有害的。由于需要特征大小，几百纳米和3D堆积的集成，因此现有的实验未能仔细分析这种集成的光学设备中的应力。我们首次使用集成的拉曼光谱法（IRS）首次提出了硅波导的应力张量。该实验技术对有效应力直接敏感，有效应力涉及引导模式的光学特性，在工作波长和光子成分的极化状态下。实验应力张量与仿真非常吻合。
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.
