论文标题
关于MNBI2TE4纳米电视中高田Chern绝缘子手性边缘状态无耗散运输的实验证据
Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
论文作者
论文摘要
我们证明了在量子异常霍尔绝缘子候选MNBI2TE4中手性边缘状态（CES）的无耗散转运。该设备在从非常低到22 K的Neel温度的一系列温度下，均超过0.97 h/e2的量化大型高原的纵向电阻均接近零。每个探针非定位测量值接近零零的电阻和两种验证测量值的均值+1 H/e2均具有+1 H/e2的仪式，同时均具有+1 H/e2的仪式。这表明边缘状态的不隔离以及手性。 CES显示了三个温度依赖性的机制，即，保存完好的耗散运输在6 K以下，可变范围跳跃，同时增加了高于22 K的温度和热激活。即使在最低温度下，超过1.4μa的电流也会破坏无耗散的运输。这些形成了MNBI2TE4系统中Chern绝缘体状态的完整证据。
We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 μA breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.
