论文标题
部分可观测时空混沌系统的无模型预测
Exchange Bias and Interface-related Effects in Two-dimensional van der Waals Magnetic Heterostructures: Open Questions and Perspectives
论文作者
论文摘要
交换偏置效应被称为磁性双层膜的根本和技术上重要的磁性。它表现为在磁场存在下以冷却为生的磁性磁滞回路中的水平移位。范德华（VDW）异质结构的EB效应提供了一种新的方法来调整新发现的单层磁体的磁性特性，并为磁性VDW异质结构增加了新的动力。实际上，最近在各种低维的VDW磁系统中报道了有趣的EB效果，范围从弱层中耦合的VDW磁体（例如Fe3gete2）到双层型双层磁体，由两种不同的磁性VDW材料组成（例如，Fe3gete2/crcl3，Fe3gete2/fil3gete2/fil3，fe3gete2，fe3gete2/fil3，MN VDW有缺陷的磁铁（例如VSE2/MOS2）或金属磁铁/VDW有缺陷的磁铁接口（例如Fe/Mos2）。尽管在自旋设备应用中具有巨大的潜力，但研究人员仍然难以捉摸观察到的EB效应的物理起源。我们在这里对EB效应和相关现象进行了批判性综述，例如各种VDW异质结构系统中的磁接近度（MP），并提出了解决一些新兴基本问题的方法。
The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe3GeTe2) to a bilayer composed of two different magnetic vdW materials (e.g., Fe3GeTe2/CrCl3, Fe3GeTe2/FePS3, Fe3GeTe2/MnPS3), to bilayers of two different vdW defective magnets (e.g., VSe2/MoS2), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS2). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. We present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.
