论文标题
\ texorpdfstring中负差分抗性的见解
Insights to negative differential resistance in \texorpdfstring{MoS\textsubscript{2}}{MoS2} Esaki diodes: a first-principles perspective
论文作者
论文摘要
\ ce {mos_2}是一种二维材料，具带隙，具体取决于层的数量，外部电场可调节。该材料中实验观察到的内层带对频段隧道和层间隧道隧道为隧道磁场效应晶体管中的新电子应用提供了机会。但是，基于第一原则的理论调查从未支持这种广泛接受的概念。在这项工作中，使用密度函数理论以及非平衡元素绿色的功能技术和我们的电场门控方法，通过大规模计算方法启用，我们研究了平面和侧面堆栈中的频段对齐与传输之间的关系，\ ce ce {mos_2} $ p $ - $ - $ - $ - $ i $ n $ n $ n $ nucturations。我们证明了面内和层间电流的负差分电阻，这是隧道二极管连接的主食特征，并分析了这种效应的物理起源。还检查了静电电势，范德华屏障和复杂的带分析，以彻底了解esaki二极管。
\ce{MoS_2} is a two dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field effect transistors. However, such a widely accepted concept has never been supported up by theoretical investigations based on first principles. In this work, using density functional theory, in conjunction with non-equilibrilibrium Green's function techniques and our electric field gating method, enabled by a large-scale computational approach, we study the relation between band alignment and transmission in planar and side-stack \ce{MoS_2} $p$-$i$-$n$ junction configurations. We demonstrate the presence of negative differential resistance for both in-plane and interlayer current, a staple characteristic of tunnel diode junctions, and analyze the physical origin of such an effect. Electrostatic potentials, the van der Waals barrier, and complex band analysis are also examined for a thorough understanding of Esaki Diodes.
