论文标题
拓扑绝缘子纳米线中的金属化和接近性超导性
Metallization and proximity superconductivity in topological insulator nanowires
论文作者
论文摘要
由拓扑绝缘体(TI)纳米线组成的异质结构与超导层接近,为实现拓扑超导性和相关的主要约束状态(MBSS)提供了有希望的途径。在这里,我们研究了由$ s $波超导体和ti纳米线的薄层之间的耦合引起的效果。我们表明,超导体在Ti纳米线中的金属化产生了一种明显的现象学。在诱导大型超导配对电位所需的强耦合极限中,我们发现金属化会导致Ti纳米线子带($ \ sim 20 $ MEV)的变化,并且会导致磁场施加的磁场尺寸较小,从而导致较小的磁场尺寸,该磁场与NanoWire轴平行施加了平行的磁场。令人惊讶的是,我们发现Ti纳米线中的金属化效应也可能是有益的。最值得注意的是,与超导体耦合在ti纳米线的一部分中诱导潜力,与超导体接近界面,这破坏了反转对称性,并且在有限的动量上可以提高子带内状态的自旋退化。由于与超导体的耦合可以创建或增强子带分裂,这是实现拓扑超导的关键。这与半导体形成了鲜明的对比,在这种情况下,已经表明金属化效应总是减少由旋转轨道耦合引起的等效亚带分解。我们还发现,在某些几何形状中,金属化效应可以减少进入拓扑阶段所需的临界磁性。我们得出的结论是,与半导体不同,Ti纳米线中发生的金属化效应可以相对容易缓解,例如,通过修改附着的超导体的几何形状或通过补偿TI材料。
A heterostructure consisting of a topological insulator (TI) nanowire brought into proximity with a superconducting layer provides a promising route to achieve topological superconductivity and associated Majorana bound states (MBSs). Here, we study effects caused by such a coupling between a thin layer of an $s$-wave superconductor and a TI nanowire. We show that there is a distinct phenomenology arising from the metallization of states in the TI nanowire by the superconductor. In the strong coupling limit, required to induce a large superconducting pairing potential, we find that metallization results in a shift of the TI nanowire subbands ($\sim 20$ meV) as well as it leads to a small reduction in the size of the subband gap opened by a magnetic field applied parallel to the nanowire axis. Surprisingly, we find that metallization effects in TI nanowires can also be beneficial. Most notably, coupling to the superconductor induces a potential in the portion of the TI nanowire close to the interface with the superconductor, this breaks inversion symmetry and at finite momentum lifts the spin degeneracy of states within a subband. As such coupling to a superconductor can create or enhance the subband splitting that is key to achieving topological superconductivity. This is in stark contrast to semiconductors, where it has been shown that metallization effects always reduce the equivalent subband-splitting caused by spin-orbit coupling. We also find that in certain geometries metallization effects can reduce the critical magnetic required to enter the topological phase. We conclude that, unlike in semiconductors, the metallization effects that occur in TI nanowires can be relatively easily mitigated, for instance by modifying the geometry of the attached superconductor or by compensation of the TI material.