论文标题
通过原子层沉积的单个2D范德华层的可扩展产生：金属箔和膜上的双层二氧化硅
Scalable production of single 2D van der Waals layers through atomic layer deposition: Bilayer silica on metal foils and films
论文作者
论文摘要
原子层沉积（ALD）的自限性性质使其成为种植二维范德华（2D-VDW）材料的单层材料的一种吸引人的选择。在本文中，证明了2D-VDW形式的SiO2的单层可以通过ALD在AU和PD PolyCryStalline箔和外延膜上生长。二氧化硅是通过在525 K处的两个Bis（二乙基氨基）硅烷和氧血浆暴露沉积的。初始沉积产生了三维无序的二氧化硅层。但是，随后退火以上950 K驱动结构重排，导致2D-VDW。这种退火可以在环境压力下进行。退火后记录的表面光谱表明，两个ALD循环的产生接近于通过在超高真空中精确SIO沉积制备的2D-VDW二氧化硅获得的二氧化硅覆盖率。在PD膜上对Ald生长的2D-VDW二氧化硅的分析表明，无定形和不稳定的结晶2D阶段的共存。相反，AU（111）膜上的ALD生长主要产生了无定形相，而UHV中的SIO沉积仅导致了晶相，这表明SI源的选择可以实现相位控制。
The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of SiO2 can be grown by ALD on Au and Pd polycrystalline foils and epitaxial films. The silica was deposited by two cycles of bis (diethylamino) silane and oxygen plasma exposure at 525 K. Initial deposition produced a three-dimensionally disordered silica layer; however, subsequent annealing above 950 K drove a structural rearrangement resulting in 2D-VDW; this annealing could be performed at ambient pressure. Surface spectra recorded after annealing indicated that the two ALD cycles yielded close to the silica coverage obtained for 2D-VDW silica prepared by precision SiO deposition in ultra-high vacuum. Analysis of ALD-grown 2D-VDW silica on a Pd(111) film revealed the co-existence of amorphous and incommensurate crystalline 2D phases. In contrast, ALD growth on Au(111) films produced predominantly the amorphous phase while SiO deposition in UHV led to only the crystalline phase, suggesting that the choice of Si source can enable phase control.
