论文标题
高工作温度等离子体红外探测器
High operating temperature plasmonic infrared detectors
论文作者
论文摘要
III-V半导体II型超晶格（T2SL）是一个有前途的材料系统，有可能在升高温度下显着降低红外的黑暗电流，从而实现高性能的红外光电遗传学。但是，T2SL一直在努力满足长期选择的红外探测器材料HGCDTE设定的性能指标。最近，外延等离子检测器架构表明T2SL检测器性能与77 K -195 K温度范围内的HGCDTE相当。在这里，我们展示了高工作温度等离激元T2SL检测器结构，在可通过两阶段热电冷却器访问的温度下进行高性能操作。具体而言，我们展示了在高达230 K的温度下运行的长波红外等离子体检测器，同时将深色电流保持在“规则07”启发式下。 At a detector operating temperature of 230 K, we realize 22.8% external quantum efficiency in a detector absorber only 372 nm thick ($\simλ_0 /25$) with peak specific detectivity of $2.29x10^{9}$ cm Hz$^{1/2}$ W$^{-1}$ at 9.6 $μ$m, well above commercial detectors at the same operating temperature.
III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the longstanding infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic detector architectures have demonstrated T2SL detector performance comparable to HgCdTe in the 77 K - 195 K temperature range. Here we demonstrate a high operating temperature plasmonic T2SL detector architecture with high-performance operation at temperatures accessible with two-stage thermoelectric coolers. Specifically, we demonstrate long-wave infrared plasmonic detectors operating at temperatures as high as 230 K while maintaining dark currents below the "Rule 07" heuristic. At a detector operating temperature of 230 K, we realize 22.8% external quantum efficiency in a detector absorber only 372 nm thick ($\simλ_0 /25$) with peak specific detectivity of $2.29x10^{9}$ cm Hz$^{1/2}$ W$^{-1}$ at 9.6 $μ$m, well above commercial detectors at the same operating temperature.
