学术文献库

We employ a combined experimental-theoretical study of the first- and second-order Raman modes of monoclinic $β$-Ga$_{2}$O$_{3}$. The investigated materials is of particular interest due to its deep-UV bandgap paired with a high critical field strength, offering promising applications in power-electronics. A crucial prerequisite for the future development of Ga$_{2}$O$_{3}$-based devices is a detailed understanding of the lattice dynamics as they are important for the elasticity (through acoustic phonons), thermal conductivity (through the heat transferred by phonons), the temperature-dependence of the bandgap (impacted by electron-phonon coupling) or the free carrier transport (via phonon scattering). Polarized micro-Raman spectroscopy measurements on the (010) and ($\bar{2}01$) planes enable the determination of the phonon frequencies of all 15 first-order and more than 40 second-order Raman modes. The experimental results are correlated with calculations of the mode frequencies, phonon dispersion relation and phonon density of states using density functional perturbation theory (DFPT). By applying a group-theoretical analysis, we are able to distinguish between overtones and combinational modes and identify the high symmetry points in the Brillouin zone which contribute to the observed second order modes. Based on these information, we demonstrate the simultaneous determination of Raman-, IR-, and acoustic phonons in $β$-Ga$_{2}$O$_{3}$ by second-order Raman spectroscopy.