论文标题
电荷噪声引起的硅孔旋转量子
Charge-noise induced dephasing in silicon hole-spin qubits
论文作者
论文摘要
我们研究了限制在准二维硅量子点中的一个孔的理论上电荷诱导的自旋去度。我们治疗的核心是对Luttinger Hamiltonian的更高级校正。使用实验报道的参数，我们发现新术语为孔旋转的dephasing产生了甜点，这些词对设备的详细信息很敏感：点大小和不对称性，生长方向以及应用的磁性和电场。此外，我们估计，在甜点上的脱落时间被几个数量级增强，直到毫秒级。
We investigate theoretically charge-noise induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet-spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet-spots is boosted by several orders of magnitude, up to order of milliseconds.
