弯曲的单晶硅中通道和未通道正电荷颗粒的多重散射

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弯曲的单晶硅中通道和未通道正电荷颗粒的多重散射

Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon

论文作者

Scandale, W., Arduini, G., Cerutti, F., Esposito, L. S., Garattini, M., Gilardoni, S., Losito, R., Masi, A., Mirarchi, D., Montesano, S., Redaelli, S., Rossi, R., Smirnov, G., Burmistrov, L., Dubos, S., Puill, V., Stocchi, A., Bandiera, L., Guidi, V., Mazzolari, A., Romagnoni, M., Murtas, F., Addesa, F., Cavoto, G., Iacoangeli, F., Galluccio, F., Afonin, A. G., Chesnokov, Yu. A., Durum, A. A., Maisheev, V. A., Sandomirskiy, Yu. E., Yanovich, A. A., Kovalenko, A. D., Taratin, A. M., Denisov, A. S., Gavrikov, Yu. A., Ivanov, Yu. M., Malyarenko, L. G., Borg, J., James, T., Hall, G., Pesaresi, M.

论文摘要

我们介绍了一项实验研究的结果，该研究是对单晶硅弯曲样品中带正电的高能颗粒的多个散射的结果。这项工作证实了最近发现的RMS在硅平面中引导的颗粒的多个散射角的效果。在平面与弯曲平面正交中观察到效果。我们详细介绍了角度约束对效应幅度的影响。在不同能量下的多个散射过程的比较表明违反了用能量的通道颗粒的RMS角度的反比比例定律。通过增加统计数据，我们改善了在硅晶体中移动但未引导的颗粒的多个散射测量结果。

We present the results of an experimental study of multiple scattering of positively charged high energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.

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