论文标题
耗散性拓扑边缘状态对MNBI2TE4中量化运输的影响
Influences of the dissipative topological edge state on quantized transport in MnBi2Te4
论文作者
论文摘要
量子大厅（QH）效应的美是源自拓扑边缘状态的大厅阻力量化的计量精度。了解导致量化崩溃的因素不仅为这些边缘状态的拓扑保护的性质提供了重要的见解，而且对涉及这种量化运输的设备应用是有益的。在这项工作中，我们结合了传统的运输和实际空间电导率映射，以研究量化分解是否与经过研究的MNBI2TE4系统中边缘状态的消失相关。我们的实验结果明确地表明，当量化发生故障发生时，拓扑边缘状态确实存在。这种边缘状态本质上是耗散的，由于其扩散特征导致与实际设备中的散装和其他边缘状态重叠，可能导致量化崩溃。我们的发现使人们注意QH运输研究中通常无法访问的问题，但可以在实际测量和设备应用中发挥重要作用。
The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.
