与超导通过 - 硅质vias的Qubit兼容底物

论文标题

与超导通过 - 硅质vias的Qubit兼容底物

Qubit-compatible substrates with superconducting through-silicon vias

论文作者

Grigoras, K., Yurttagül, N., Kaikkonen, J. -P., Mannila, E. T., Eskelinen, P., Lozano, D. P., Li, H. -X., Rommel, M., Shiri, D., Tiencken, N., Simbierowicz, S., Ronzani, A., Hätinen, J., Datta, D., Vesterinen, V., Grönberg, L., Biznárová, J., Roudsari, A. Fadavi, Kosen, S., Osman, A., Prunnila, M., Hassel, J., Bylander, J., Govenius, J.

论文摘要

我们通过硅质脉冲和适合超导量子处理器的电极进行制造和表征超导。我们在单光子水平上激发的测试谐振器的内部质量因子在具有超导VIA的芯片上激发，用于在芯片的前两侧缝合地面平面。尽管存在VIA，但这种谐振器的性能与基于硅的平面解决方案的最先进。通过缝合地面平面是一种重要的促进技术，用于增加量子处理器芯片的物理大小，并且是迈向具有三维集成的更复杂量子设备的第一步。

We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.

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