论文标题
控制稳定性，可变性和可靠性问题的因素，在重新兰氏设备中
Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study
论文作者
论文摘要
导电丝（CF）的形态演化主要控制电阻随机访问记忆（RERAM）设备的电响应。但是，在材料和处理方面，控制此类CF的生长的参数足够。扩展了Roy和Cha提出的重新兰解系统的相位场技术[J.应用。物理。 128，205102（2020）]，我们可以成功地对完整的集合（低电阻态）和复位（高电阻状态）建模，这是由于使用扫描电压。识别影响多周期\ emph {i-v}响应或耐力行为的稳定性的关键参数。提出的模型重新兰解系统的计算发现对于将多参数影响与影响设备性能并导致设备故障的耐力周期的稳定性，可变性和可靠性相关联是实用的。我们认为，将CF的形态变化与电响应联系起来的计算方法有可能进一步理解和优化RERAM设备的性能。
The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which control the growth of such CF are plenty. Extending the phase field technique for ReRAM systems presented by Roy and Cha [J. Appl. Phys. 128, 205102 (2020)], we could successfully model the complete SET (low resistance state) and RESET (high resistance state) sates due to the application of sweeping voltage. The key parameters that influence the stability of the multi-cycle \emph{I-V} response or the endurance behavior are identified. The computational findings of the presented model ReRAM system are practical in correlating the multi-parametric influence with the stability, variability, and reliability of the endurance cycle that affect the device performance and also lead to the device failure. We believe that our computational approach of connecting the morphological changes of the CF with the electrical response, has the potential to further understand and optimize the performance of the ReRAM devices.
