论文标题
元素掺杂增强的电荷到自旋转换效率
Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal
论文作者
论文摘要
拓扑半学（TSS）是由于其大电荷到旋转转换效率，是低功率自旋轨道扭矩（SOT）设备的有前途的候选者。在这里，我们研究了无定形PTSN4（5 nm）/COFEB（2.5-12.5 nm）层状结构在室温下通过Magnetron溅射方法制备的分层结构的电荷到旋转转换效率。 PTSN4/COFEB双层的电荷与旋转比为0.08，其特征在于自旋扭矩铁磁共振（ST-FMR）技术。通过将像Al和COSI等掺杂剂诱导到PTSN4中，该比率可以进一步增加到0.14。掺杂剂也可以减少（掺杂）或增加（COSI掺杂）PTSN4的电阻率。这项工作提出了一种加强与掺杂剂的无定形TSS中自旋轨道耦合（SOC）的方法。
Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a magnetron sputtering method at room temperature. The charge-to-spin ratio of PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic resonance (ST-FMR) technique. This ratio can further increase to 0.14 by inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease (Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with dopants.
