论文标题
X射线应用的倒数低增益雪崩检测器（ILGAD）外围设计
Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications
论文作者
论文摘要
LGAD技术是在粒子物理领域内建立的，它是HL-LHC的Atlas和CMS升级的定时检测器的基线技术。已经提出了针对高粒度定时检测器（HGTD）和ATLAS和CMS实验的端盖正时层（ETL）的像素化LGAD。分割LGAD的缺点是像素和随之而来的填充因子的降低。从这个意义上讲，IMB-CNM提出了逆LGAD（ILGAD）技术，以增强填充因子并达到出色的跟踪功能。在这项工作中，我们通过开发新一代的Ilgads来探讨ILGAD传感器在X射线应用中的使用。通过TCAD工具，通过双侧优化，通过TCAD工具通过TCAD工具进行了优化，这使其适合X射线辐照。 X射线照射之前和之后，制造的Ilgad传感器表现出良好的电气性能。与照射后的第一次ilgad生成相反，第二伊尔加德的生成能够承受相同的电压。
LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by developing a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation.
