论文标题
铜底物支撑的石墨烯氧化石墨烯的意外自发水解离
Unexpectedly Spontaneous Water Dissociation on Graphene Oxide Supported by Copper Substrate
论文作者
论文摘要
水解离在科学领域至关重要,并且对各种技术应用引起了极大的兴趣。但是,即使是在氧化石墨烯(GO)上吸附的水,也已经将破坏水分子内O-H键的高激活屏障被确定为瓶颈。在此,使用密度函数理论计算,我们证明了水分子可以在铜底物(111)表面(Copper-Go)的(111)表面上自发解离。该过程涉及从水转移到界面氧基团的质子,以及共价键合的氢氧化物。与GO相比,铜色上的水解离屏障显着降低,小于或与热波动相媲美。这归因于铜底物和GO之间的轨道杂交相互作用,从而增强了沿着GO的基础平面进行水解离的界面氧基团的反应活性。我们的工作提供了一种新的策略,可以通过GO上界面氧基团的底物增强反应活性进入水解离,并表明底物可以作为调整各种二维材料设备的催化性能的重要关键。
Water dissociation is of fundamental importance in scientific fields and has drawn considerable interest in diverse technological applications. However, the high activation barrier of breaking the O-H bond within the water molecule has been identified as the bottleneck, even for the water adsorbed on the graphene oxide (GO). Herein, using the density functional theory calculations, we demonstrate that the water molecule can be spontaneously dissociated on GO supported by the (111) surface of the copper substrate (Copper-GO). This process involves a proton transferring from water to the interfacial oxygen group, and a hydroxide covalently bonding to GO. Compared to that on GO, the water dissociation barrier on Copper-GO is significantly decreased to be less than or comparable to thermal fluctuations. This is ascribed to the orbital-hybridizing interaction between copper substrate and GO, which enhances the reaction activity of interfacial oxygen groups along the basal plane of GO for water dissociation. Our work provides a novel strategy to access water dissociation via the substrate-enhanced reaction activity of interfacial oxygen groups on GO and indicates that the substrate can serve as an essential key to tuning the catalytic performance of various two-dimensional material devices.