论文标题

正常和超导化合物中状态的二维密度

The two-dimensional density of states in normal and superconducting compounds

论文作者

Contreras, P., Devi, A., Uzcategui, D., Ochoa, E.

论文摘要

目前的工作代表了对二维紧密结合模型的数值计算(DOS)的数值计算,该模型具有正常状态,并且对两个超导顺序参数。一个是单线标量状态,另一个是三重态矢量状态。一开始,将重点放在一般表达式中,通常用于计算状态的密度作为部分状态的数量和总数,自由度和AB-Initio方法最常用于其计算。然后,研究了通过改变费米能量和跳跃参数的过渡到正常状态。之后,使用零温度散射横截面对状态的超导密度的数值计算进行了两个阶参数。最后,计算出使用拉金方程的零件的残留密度,并针对两个阶参数对称性的散射强度计算。

The present work represents a review for the numerical calculation of the density of states (DoS) for two-dimensional tight-binding models with first neighbors in its normal state and for two superconducting order parameters. One is a singlet scalar state and the other is a triplet vector state. At the beginning an emphasis is given to the general expressions commonly used to the calculation of the density of states as the number of partial and total number of states, the degrees of freedom and the ab-initio methods most commonly used to its calculation. Then, the transition happening to the DoS normal states by varying the Fermi energy and the hopping parameter is investigated. After that, the numerical calculation of the superconducting density of states using the zero-temperature scattering cross-section is performed for the two order parameters. Finally, the residual density of states depending on disorder and the scattering potential strength using the Larkin equation are calculated for the two order parameter symmetries different in nature.

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