论文标题
电子 - 音波相互作用和纵向半导体中的纵向横向声子分裂
Electron-phonon interaction and longitudinal-transverse phonon splitting in doped semiconductors
论文作者
论文摘要
我们研究了在有限温度下在有限的载体下进行筛选，研究了掺杂对电子音纸相互作用的影响以及掺杂半导体中的声子频率。我们研究了筛选对Fröhlich样顶点以及动态矩阵的远程组件的影响，这超出了基于最大局部局部Wannier函数的计算方法的开发，超越了对未蛋白质晶体的最新描述。我们将方法应用于碳化物的立方硅，在这种情况下，在掺杂fröhlich耦合和纵向透明的声子分裂的情况下，我们会大大降低，从而影响可观察到的特性，例如电子寿命。
We study the effect of doping on the electron-phonon interaction and on the phonon frequencies in doped semiconductors, taking into account the screening in presence of free carriers at finite temperature. We study the impact of screening on the Fröhlich-like vertex and on the long-range components of the dynamical matrix, going beyond the state-of-the-art description for undoped crystals, thanks to the development of a computational method based on maximally localized Wannier functions. We apply our approach to cubic silicon carbide, where in presence of doping the Fröhlich coupling and the longitudinal-transverse phonon splitting are strongly reduced, thereby influencing observable properties such as the electronic lifetime.
