论文标题
通过阳离子的亲电攻击对有机半导体的通用P掺杂
Universal and Efficient p-Doping of Organic Semiconductors by Electrophilic Attack of Cations
论文作者
论文摘要
掺杂对于量身定制半导体的电性能至关重要。但是，目前的有机半导体（OSC）的掺杂方法效率低下或仅适用于少数OSC，从而严重限制了它们的一般应用。在此，我们通过研究掺杂剂三元阳离子和聚（3-己基噻吩）（P3HT）之间的相互作用来揭示一种新型的P掺杂机制（P3HT）。发现三元阳离子对硫烯的亲电攻击导致形成烷基化离子，这些烷基化离子从相邻的P3HT链中诱导电子转移，从而导致P掺杂。这种独特的P掺杂机制可用于兴奋各种OSC，包括具有高电离能量的OSC（即= 5.8 eV）。此外，这种兴奋剂机制赋予三元阳离子的掺杂能力，从而导致极性效率为100％，而P3HT的掺杂效率超过80％。这种新颖的兴奋剂机制的发现和阐明不仅指出，强力电力是OSC的一类有效的P型，而且还为OSC高效掺杂提供了新的机会。
Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to a small number of OSCs, seriously limiting their general application. Herein, we reveal a novel p-doping mechanism by investigating the interactions between the dopant trityl cation and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of alkylated ions that induce electron transfer from neighboring P3HT chains, resulting in p-doping. This unique p-doping mechanism can be employed to dope various OSCs including those with high ionization energy (IE=5.8 eV). Moreover, this doping mechanism endows trityl cation with strong doping ability, leading to polaron yielding efficiency of 100 % and doping efficiency of over 80 % in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities towards highly efficient doping of OSCs.
