论文标题
离子植入的MGO晶体中的缺陷调制带修饰：实验和AB始于计算
Defect Modulated Band Modification in Ion Implanted MgO Crystal: Experimental and Ab Initio Calculations
论文作者
论文摘要
缺陷创造和歼灭是设备制造中的一个基本概念。该报告研究了MEV辐射诱导的货物和传导带之间的MGO中的光带隙修饰。 MGO单晶上的离子植入与F（阴离子空位中心），$ F_2 $，其他氧气空位中心和V（阳离子空位中心）中心产生替代缺陷状态，这些中心可通过吸收和光致发光光谱（可作为灯丝）在基于VANANCE RODER NEMEMENT的电阻随机访问记忆中应用。通过修改电子带结构来确定光带隙与ni离子的变化。密度功能理论（DFT）计算有助于理解由MGO结构组成的空缺和替代缺陷的电子带结构的演变。
Defects creation and annihilation is a fundamental concept in device fabrication. This report studies the optical bandgap modification in MgO by MeV Ni ion irradiation-induced defect states between valance and conduction band. Ion implantation on MgO single crystal produces substitutional defect states along with F (anionic vacancy center), $F_2$, other oxygen vacancy center and V (cationic vacancy center) centers confirmed from absorption and photoluminescence spectra that can be applied as filament in valance charge memory based resistive random access memories. The variation of optical bandgap with Ni ion fluences is ascertained by modifying the electronic band structure. Density Functional Theory (DFT) calculation assists in understanding the evolution of electronic band structure for vacancies and substitutional defects consisting of MgO structures.
