论文标题
耦合的表面和大量扩散在晶体中
Coupled surface and bulk diffusion in crystals
论文作者
论文摘要
我们分析了晶体效率界面附近的点缺陷和表面扩散，并表明在表面 - vacuum边界处的原子反应改变了大量扩散。提出了一种新的原子机制，用于产生点缺陷和重组。在这种机制中，原子步骤不仅被视为吸附原子和表面空缺的来源和沉没，而且还被视为散装本地点缺陷 - 空缺和自我纠缠。我们证明，大量扩散与Adatoms和表面空位的扩散通过中间地下层中的原子过程，其中包含吸附的自相互作用和大量空位。结果表明，散装点缺陷的平衡浓度之间存在基本关系。
We analyze point defect bulk and surface diffusion near the crystal-vacuum interface and show that bulk diffusion is altered by atomic reactions at the surface-vacuum boundary. A new atomic mechanism for point defect generation and recombination is presented. In this mechanism, atomic steps are considered as sources and sinks not only for adsorbed atoms and surface vacancies but also for bulk native point defects -- vacancies and self-interstitials. We demonstrate that bulk diffusion is coupled with the diffusion of adatoms and surface vacancies at the surface via the atomic processes in the intermediate subsurface layer, containing adsorbed self-interstitials and bulk vacancies. The results show the existence of the fundamental relation between equilibrium concentrations of the point defects in bulk and at the surface of the crystal.
