论文标题
晶圆尺度的低disorder 2deg in $^{28} $ si/sige，没有外在si帽
Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap
论文作者
论文摘要
我们通过减少压力的化学蒸气沉积来生长$^{28}。结果，$^{28} $ SI/SIGE异质结构场效应晶体管具有尖锐的半导体/介电界面，并支持二维电子气体，具有100 mm晶片的增强和更均匀的传输性能。在t = 1.7 K时，我们测量的高平均迁移率为（1.8 $ \ pm $ 0.5）$ \ times $ 10 $^5 $ cm $^2 $/vs和低平均渗透密度为（9 $ \ pm $ 1）$ \ times $ 10 $^{10 $^{10} $^{10} $ CM $^{ - 2} $。 From the analysis of Shubnikov-de Haas oscillations at T = 190 mK we obtain a long mean single particle relaxation time of (8.1$\pm$0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5$\pm$0.6)$\times$10$^4$ cm$^{2}$/Vs and (40$\pm$3) $μ$eV, respectively, and平均丁格尔比为（2.3 $ \ pm $ 0.2），表明远距离杂质的散射减少，而低距离环境则用于托管高性能自旋量子。
We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobility of (1.8$\pm$0.5)$\times$10$^5$ cm$^2$/Vs and a low mean percolation density of (9$\pm$1)$\times$10$^{10}$ cm$^{-2}$. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK we obtain a long mean single particle relaxation time of (8.1$\pm$0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5$\pm$0.6)$\times$10$^4$ cm$^{2}$/Vs and (40$\pm$3) $μ$eV, respectively, and a small mean Dingle ratio of (2.3$\pm$0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits.
