论文标题
$β$ -GA $ _2 $ o $ $ _3 $纳米膜schottky屏障二极管的瞬态特征
Transient Characteristics of $β$-Ga$_2$O$_3$ Nanomembrane Schottky Barrier Diodes on Various Substrates
论文作者
论文摘要
In this paper, a transient delayed rising and fall time of $β$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under a different temperature condition.这些设备显示出明显延迟的转盘/偏离 - $β$ -GA $ _2 $ o $ $ _3 $ nms SBD的瞬时时间是在高K基板上传输的。 Furthermore, a relationship between the $β$-Ga$_2$O$_3$ NM thicknesses and their transient characteristics were systematically investigated and found that phonon scattering plays an important role in heat dissipation as the thickness of $β$-Ga$_2$O$_3$ NMs get thinner which is also verified by the Multiphysics simulator.总体而言，我们的结果揭示了具有不同的热性能和不同\ b {eta} -GA2O3 NMS厚度的各种基材的影响，其性能的性能为$β$ -GA $ _2 $ _2 $ o $ $ _3 $ _3 $ nms的设备。因此，这些结果可以指导我们进一步的努力，以优化未来$β$ -GA $ _2 $ o $ $ _3 $ _3 $设备的性能，从$β$ -GA $ -GA $ _2 $ o $ _3 $ layer中最大化散热。
In this paper, a transient delayed rising and fall time of $β$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under a different temperature condition. The devices exhibited noticeably less-delayed turn-on-/off- the transient time when $β$-Ga$_2$O$_3$ NMs SBDs were transfer-printed on a high-k substrate. Furthermore, a relationship between the $β$-Ga$_2$O$_3$ NM thicknesses and their transient characteristics were systematically investigated and found that phonon scattering plays an important role in heat dissipation as the thickness of $β$-Ga$_2$O$_3$ NMs get thinner which is also verified by the Multiphysics simulator. Overall, our result reveals the impact of various substrates with different thermal properties and different \b{eta}- Ga2O3 NMs thickness with the performance of $β$-Ga$_2$O$_3$ NMs based devices. Hence, these results can guide further efforts us to optimize the performance of future $β$-Ga$_2$O$_3$ devices by maximizing heat dissipation from the $β$-Ga$_2$O$_3$ layer.
