论文标题
同型半导体中Moiré伪电磁场的超快控制
Ultrafast control of moiré pseudo-electromagnetic field in homobilayer semiconductors
论文作者
论文摘要
在同型半导体的长波长莫伊尔模式中，电子层伪源性受到相当大的Zeeman场的影响，该场是由Moiré中的层中耦合进行空间调节的。通过干扰这种空间调制，从平面外电场的均匀但动态调谐的组件中，我们表明整个Zeeman场的空间轮廓具有拓扑质地，可以通过Terahertz领域或层间偏置在超快时间尺度中控制的拓扑纹理。这种动力调制导致低能载体的平面电场出现，这与他们的真实空间浆果曲率（Moiré磁场）有关。这些新兴的电磁场在逆转山谷时具有相反的迹象，可以通过偏置脉冲或terahertz辐照在控制下操纵山谷并在Moiré景观中旋转。
In long-wavelength moiré patterns of homobilayer semiconductors, the layer pseudospin of electrons is subject to a sizable Zeeman field that is spatially modulated from the interlayer coupling in moiré. By interference of this spatial modulation with a homogeneous but dynamically tunable component from out-of-plane electric field, we show that the spatial-temporal profile of the overall Zeeman field therefore features a topological texture that can be controlled in an ultrafast timescale by a terahertz field or an interlayer bias. Such dynamical modulation leads to the emergence of an in-plane electric field for low energy carriers, which is related to their real space Berry curvature -- the moiré magnetic field -- through the Faraday's law of induction. These emergent electromagnetic fields, having opposite signs at the time reversal pair of valleys, can be exploited to manipulate valley and spin in the moiré landscape under the control by a bias pulse or a terahertz irradiation.
