论文标题
量子厅P-N连接棋盘的制造
Fabrication of quantum Hall p-n junction checkerboards
论文作者
论文摘要
通过利用多个电流端子在毫米计尺度的Praphene P-N交界器上利用了多个电流端子，可以实现ν= 2高原量化霍尔电阻的分数倍数的测量值。这些量子大厅电阻棋盘设备已被证明可以匹配使用LTSpice电路模拟器计算的数值电阻输出。从设备的功能中，模拟了量子大厅电阻棋盘的更复杂的实施例，以突出这些设备可以在其中操作的参数空间。此外，这些测量值表明，通过使用更有效的标准紫外线光刻过程，对于石墨烯设备制造，P-N结制造在毫米或厘米尺度上的可伸缩性是可行的。
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.
