论文标题

在3 K和300 K处的微晶和纳米晶体Ni金属的高场磁力

High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K

论文作者

Bakonyi, I., Czeschka, F. D., Kiss, L. F., Isnaini, V. A., Krupp, A. T., Palotás, K., Zsurzsa, S., Péter, L.

论文摘要

将磁化率(MR)和磁化等温线研究在T = 3 K和300 K的高磁场上,用于微晶($μ$ C)Ni Foil,该Ni Foil对应于Bulk Ni和纳米晶(NC)Ni Foil。在t = 3 k时,对于$ $ $ $ c-Ni样品,残留电阻率比(RRR)为331,电阻率的现场依赖性与先前报道的高纯度铁磁铁的报道相似,而NC-Ni样品的MR(H)行为则以RRR = 9的NC-Ni样品= 9的低为ni基于Ni基的浓度,而Ni = 9是相似的。在磁性饱和状态下,两个样品在t = 3 k处的电阻率增加,并且由于洛伦兹力作用于电子轨迹,因此普通的MR主导了场依赖性。但是,发现MR(H)曲线以$ $ C-Ni的饱和,而对于NC-NI,其差异是由它们的截然不同的电子均值自由路径引起的。在t = 300 K时,两个Ni样品的MR(H)曲线与散装Ni所知的曲线非常相似。磁饱和度后,电阻率几乎与磁场降低,这是由于抑制热诱导的磁性障碍而随着磁场的增加而引起的。在Kohler图的帮助下,在两个温度下分析了MR(h)数据,电阻率各向异性分裂($Δρ_{AMR} $),并得出了各向异性磁路(AMR)比率。已经证明,由于普通MR的贡献可忽略不计。发现在3 K和300 K处的两个Ni样品的数据表明$Δρ_{AMR} $的线性缩放率大约为零视场电阻率。这意味着在Ni的两个微结构状态下,AMR比随温度差异很大。

The magnetoresistance (MR) and the magnetization isotherms were studied up to high magnetic fields at T = 3 K and 300 K for a microcrystalline ($μ$c) Ni foil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil. At T = 3 K, for the $μ$c-Ni sample with a residual resistivity ratio (RRR) of 331, the field dependence of the resistivity was similar to what was reported previously for high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni sample with RRR = 9 resembled that what was observed at low temperatures for Ni-based alloys with low impurity concentration. In the magnetically saturated state, the resistivity increased with magnetic field for both samples at T = 3 K and the field dependence was dominated by the ordinary MR due to the Lorentz force acting on the electron trajectories. However, the MR(H) curves were found to be saturating for $μ$c-Ni and non-saturating for nc-Ni, the difference arising from their very different electron mean free paths. At T = 300 K, the MR(H) curves of both Ni samples were very similar to those known for bulk Ni. After magnetic saturation, the resistivity decreased nearly linearly with magnetic field which behavior is due to the suppression of thermally-induced magnetic disorder with increasing magnetic field. The MR(H) data were analyzed at both temperatures with the help of Kohler plots from which the resistivity anisotropy splitting ($Δρ_{AMR}$) and the anisotropic magnetoresistance (AMR) ratio were derived. It was demonstrated that at T = 300 K, $ρ(H\rightarrow 0)=ρ(B\rightarrow 0)$ due to the negligible contribution of the ordinary MR. The data for the two Ni samples at 3 K and 300 K were found to indicate an approximately linear scaling of $Δρ_{AMR}$ with the zero-field resistivity. This implies that the AMR ratio does not vary significantly with temperature in either microstructural state of Ni.

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