论文标题
在片上设备中以塞贝克驱动的横向热电学生成
Seebeck-driven transverse thermoelectric generation in on-chip devices
论文作者
论文摘要
最近已经提出并证明了一种非常规方法来通过结合磁和热电材料（即Seebeck驱动的横向热电学生成（STTG））来增强横向热电器的方法。在这里，我们改进了先前使用的样品结构，并在片上设备中的STTG上实现了超过40 $ $ $ V k $^{ - 1} $的大型横向热电器。我们将多晶Fe-GA合金膜直接沉积在N型Si底物上，其中Fe-GA和Si分别用作磁性和热电材料。使用微加工，通过SIO $ _ {X} $ layer在SI顶部创建了接触孔，以将Fe-GA膜与Si基板电气连接。这些具有简单结构的薄设备清楚地表现出由于STTG引起的横向热电器的增强，并且获得的值与Fe-GA膜和SI底物之间的较大尺寸比率的估计非常吻合。
An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $μ$V K$^{-1}$ due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiO$_{x}$ layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.
