论文标题
在双层MOS2中各个临界点上层间电子耦合的定量测定
Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2
论文作者
论文摘要
调整层间耦合已成为一种强大的工具，可以调整范德华（VDW）双层的电子结构。一个示例是使用Moire模式通过层间电子耦合的构型依赖性创建可控制的二维电子超级晶格。这种方法导致了扭曲的石墨烯双层中的一些显着发现，以及过渡金属二分法（TMD）同型和杂种双层。但是，在很大程度上未开发的因子是层间距离D，它可以呈指数级影响层间耦合强度。在这封信中，我们定量地确定耦合强度是双层MOS2中布里鲁因区域各个临界点的层间间隔的函数。证明了耦合参数对间隙距离的指数依赖性。最重要的是，我们实现了280％的K-Valley耦合强度，而VDW差距降低了8％，这表明在设计VDW Biyers的新型电子系统方面提出了新的策略。
Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and transition metal dichalcogenide (TMD) homo- and hetero-bilayers. However, a largely unexplored factor is the interlayer distance, d, which can impact the interlayer coupling strength exponentially. In this letter, we quantitatively determine the coupling strengths as a function of interlayer spacing at various critical points of the Brillouin zone in bilayer MoS2. The exponential dependence of the coupling parameter on the gap distance is demonstrated. Most significantly, we achieved a 280% enhancement of K-valley coupling strength with an 8% reduction of the vdW gap, pointing to a new strategy in designing a novel electronic system in vdW bilayers.
