论文标题
氧化甲氧化；用于改善高温性能的氧化二极管
Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance
论文作者
论文摘要
$β$ -GA $ {_ 2} $ O $ {_ 3} $基于的半导体设备有望显着改善高功率和高温性能，因为其超宽带盖接近5 eV。但是，这些超宽带设备的高温操作通常受到索特基屏障的相对较低的1-2 eV内置电位的限制。在这里，我们报告了杂项p-nio/n- $β$ -ga $ {_ 2} $ o $ $ {_ 3} $ DIODES制造和针对高温设备应用的优化，证明了当前的整流比在410°C下的当前整流率超过10 $ {^6} $。与在同一单晶$β$ -GA $ -GA $ -GA $ -GA $ {_ 2} $ O $ $ $ $ $ {_ 3} $基质上相比，NIO异质结二极管可以实现更高的转交压电压和较低的反向泄漏电流，尽管由室间重组占主导地位。电气表征和设备建模表明，这些优点是由于内置电位较高和额外的带偏移所致。这些结果表明，基于$β$ -GA $ {_ 2} $ O $ $ $ {_ 3} $的异质结P-N二极管可以显着改善高温电子设备和传感器性能。
$β$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-$β$-Ga${_2}$O${_3}$ diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 10${^6}$ at 410°C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal $β$-Ga${_2}$O${_3}$ substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on $β$-Ga${_2}$O${_3}$ can significantly improve high-temperature electronic device and sensor performance.
