论文标题
在高凝集合金型金属柜（AGSNPBBI）（1-X）/4inxte中调整载体浓度和超导性
Tuning of Carrier Concentration and Superconductivity in High-Entropy-Alloy-Type Metal Telluride (AgSnPbBi)(1-x)/4InxTe
论文作者
论文摘要
高渗透性合金型（HEA型）化合物超导体一直引起人们对具有局部结构不均匀性的新型异国情调超导体的关注。 NaCl-type（Ag，in，sn，pb，bi）te是典型的重型超导体，但是载体掺杂机制尚不清楚。在这项研究中，我们使用高压合成合成（Ag，in，sn，pb，bi）TE浓度各不相同：研究的系统为（AGSNPBBI）（1-X）/4inxte（x = 0-0.4）。获得X = 0-0.3的单相样品。对于X = 0，观察到了电阻率的半导体样温度依赖性，而掺杂样品的超导率则出现。对于X = 0.3，最高的过渡温度（TC）为3.0 K。 Seebeck系数随X的增加而降低，这表明IN3+在（AGSNPBBI）（1-X）/4inxte中产生电子载体。调整（Ag，in，sn，pb，bi）TE的载体浓度和超导性能将有助于进一步研究Hea型化合物中外来的超导性。
High-entropy-alloy-type (HEA-type) compound superconductors have been drawing much attention as a new class of exotic superconductors with local structural inhomogeneity. NaCl-type (Ag,In,Sn,Pb,Bi)Te is a typical HEA-type superconductor, but the carrier doping mechanism had been unclear. In this study, we synthesized (Ag,In,Sn,Pb,Bi)Te with various In concentration using high-pressure synthesis: the studied system is (AgSnPbBi)(1-x)/4InxTe (x = 0-0.4). Single-phase samples were obtained for x = 0-0.3. A semiconductor-like temperature dependence of resistivity was observed for x = 0, while superconductivity appeared for the In-doped samples. The highest transition temperature (Tc) was 3.0 K for x = 0.3. The Seebeck coefficient decreases with increase of x, which suggests that In3+ generates electron carriers in (AgSnPbBi)(1-x)/4InxTe. Tuning of carrier concentration and superconducting properties of (Ag,In,Sn,Pb,Bi)Te would be useful for further investigation of exotic superconductivity in the HEA-type compound.
