论文标题
植入GE的低密度GA的热激活
Thermal activation of low-density Ga implanted in Ge
论文作者
论文摘要
GE中低密度植入GA原子的核自旋是固态Qubits的有趣候选者。迄今为止，GE植入的GA的激活研究集中在高密度上。在这里，我们将激活研究扩展到低密度状态。我们使用扩散的电阻分析和次级离子质谱法来推导植入GE的GA离子的电活激活，这是快速热退火温度和植入物密度的函数。我们表明，对于植入物条件，激活最适合400至650 $^\ Circ $ c之间的退火温度，在最高频率下，最大激活为64％。低于400 $^\ circe $ c，剩余的植入物损坏导致充当多余的载体的缺陷，并且观察到了650 $^\ Circ $ c，表面粗糙和GA离子的损失。随着植入物的植入量从$ 6 \ times10^{10} $增加到$ 6 \ times10^{12} $ cm $ $^{ - 2} $，激活从10％增加到64％。该结果提供了热退火条件，用于用于使用GE中低密度GA原子作为核自旋量子的初步研究。
The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.
