论文标题
使用高磁场解开抗铁磁NIO的电气开关
Disentangling electrical switching of antiferromagnetic NiO using high magnetic fields
论文作者
论文摘要
抗铁磁铁（AFS）的电动切换的最新证明给AF Spintronics领域带来了巨大的冲动。这些观察结果中的许多都受到非磁性效应的困扰，这些效应很难与实际磁性区分开。在这里，我们研究了最多15 t的磁场在PT/NIO设备中薄（5 nm）NiO膜的电动切换，以定量地删除这些磁性和非磁性效应。我们证明这些场抑制了NIO电气开关的磁成分，但使非磁性组件完整保持完整。使用单构化模型分离了贡献，表明它们的行为与当前密度的函数。这些结果表明，将电气方法和强磁场结合起来可能是AF Spintronics的宝贵工具，从而可以在更复杂的系统中实现和研究AFS的电气切换。
Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish from the actual magnetic ones. Here, we study the electrical switching of thin (5 nm) NiO films in Pt/NiO devices using magnetic fields up to 15 T to quantitatively disentangle these magnetic and non-magnetic effects. We demonstrate that these fields suppress the magnetic components of the electrical switching of NiO, but leave the non-magnetic components intact. Using a monodomainization model the contributions are separated, showing how they behave as a function of the current density. These results show that combining electrical methods and strong magnetic fields can be an invaluable tool for AF spintronics, allowing for implementing and studying electrical switching of AFs in more complex systems.
