论文标题
赫尔米尼和非温属系统中的第n个功率根拓扑阶段
Nth power root topological phases in Hermitian and non-Hermitian systems
论文作者
论文摘要
由于其潜在的应用，在Hermitian和非温和的系统中构建新的拓扑阶段非常重要。在这里，我们从理论上提出并在实验上证明了构建第n个功率根（NPR）拓扑阶段的一般方案。这样的方案不仅适用于Hermitian系统，还适用于非热门系统。发现随着n的增加，Hermitian系统中稳健的边缘状态变得越来越强。在非热式系统中，皮肤效应变得更加明显，它可以随着N的增加而接近理想的情况。这意味着可以通过服用不同的N来观察边缘状态和皮肤效应。通过设计电路，已通过实验证明了该方案。我们的工作开辟了一种根据要求来设计拓扑状态的新方法，这对于开发受拓扑保护的设备（例如拓扑感应，开关等）非常重要。
Constructing new topological phases is very important in both Hermitian and non-Hermitian systems because of their potential applications. Here we propose theoretically and demonstrate a general scheme experimentally to construct Nth power root (NPR) topological phases. Such a scheme is not only suitable for Hermitian systems, but also non-Hermitian systems. It is found that the robust degree of edge state in the Hermitian system becomes stronger and stronger with the increase of N. It tends to be a strongly surface localized form when N is large enough. In the non-Hermitian system, the skin effect becomes more apparent, and it approaches the ideal situation with the increase of N. This means that edge states and skin effects can be observed by taking different N. This scheme has been proved experimentally by designing circuits. Our work opens up a new way to engineer topological states according to the requirements, which is very important for developing topologically protected devices, such as topology sensing, switches, and so on.
