论文标题

部分可观测时空混沌系统的无模型预测

Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI

论文作者

Guo, San-Dong, Zhu, Yu-Tong, Qin, Ke, Ang, Yee-Sin

论文摘要

在二维(2D)材料中的压电和铁磁(FM)订单的组合,即2D压电铁磁磁性(PFM),可能为新型设备应用提供前所未有的机会。在这里,我们预测平面内FM半导体Janus单层NICLI,其磁各向异性能量(MAE)为1.439 MEV,表现出动态,机械和热稳定性。 NICLI单层具有较大的平板内压电($ d_ {11} $$ = $ 5.21 pm/v)与$ \ mathrm {mos_2} $相当。此外,NICLI具有巨大的平面压力电离($ d_ {31} $$ = $ 1.89 pm/v),这对于Ultrathin Pilezoelectric设备应用程序非常需要。事实证明,巨大的平面压电电力与电子相关性具有鲁棒性,这证实了巨大的$ d_ {31} $的可靠性。最后,与NICLI相似,在Niclbr和Nibri的Janus单层中也可以实现具有较大平面外压力电离的PFM,其预测的$ D_ {31} $为0.73 pm/v和1.15 pm/v。预测的巨大的平面压电响应使Janus单层NICLI成为多功能半导体Spintronic应用的良好平台,这也与常规半导体纳米电子设备的底/顶栅极技术兼容。

The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for novel device applications. Here, we predict an in-plane FM semiconductor Janus monolayer NiClI with considerably large magnetic anisotropy energy (MAE) of 1.439 meV, exhibiting dynamic, mechanical and thermal stabilities. The NiClI monolayer possesses larger in-plane piezoelectricity ($d_{11}$$=$5.21 pm/V) comparable to that of $\mathrm{MoS_2}$. Furthermore, NiClI has huge out-of-plane piezoelectricity ($d_{31}$$=$1.89 pm/V), which is highly desirable for ultrathin piezoelectric device application. It is proved that huge out-of-plane piezoelectricity is robust against electronic correlation, which confirms reliability of huge $d_{31}$. Finally, being analogous to NiClI, PFM with large out-of-plane piezoelectricity can also be achieved in the Janus monolayers of NiClBr and NiBrI, with the predicted $d_{31}$ of 0.73 pm/V and 1.15 pm/V, respectively. The predicted huge out-of-plane piezoelectric response makes Janus monolayer NiClI a good platform for multifunctional semiconductor spintronic applications, which is also compatible with the bottom/top gate technologies of conventional semiconductor nanoelectronic devices.

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