论文标题
手性铰链传输无序的非热二级拓扑剂
Chiral Hinge Transport in Disordered Non-Hermitian Second-Order Topological Insulators
论文作者
论文摘要
广义的散装对应关系预测了三维二阶拓扑绝缘子（3DSTIS）中手性铰链状态的存在，从而在三个维度中产生了量化的霍尔效应。 Hermitian 3DSOTI中的手性铰链状态的特征是，即使存在疾病，也具有零波动的量化传输系数。在这里，我们表明，在无序的非铁官系统中的手性铰链运输与Hermitian病例的范式偏离。我们的数值计算证明了无序的非热式3DSOTI的铰链状态的鲁棒性。平均传输系数可能会或可能不会等于手性铰链通道的数量，具体取决于手性铰链状态的墓穴，而透射系数的波动始终是非零的。这种波动不是由于铰链状态的手性损坏，而是非弱势潜力的不一致的散射。对于支持手性边界状态的拓扑材料中的一维性手性通道，此处揭示的物理学也应该是正确的，例如Chern绝缘子，三维异常霍尔绝缘子和Weyl半学。
The generalized bulk-boundary correspondence predicts the existence of the chiral hinge states in three-dimensional second-order topological insulators (3DSOTIs), resulting in a quantized Hall effect in three dimensions. Chiral hinge states in Hermitian 3DSOTIs are characterized by the quantized transmission coefficients with zero fluctuations, even in the presence of disorders. Here, we show that chiral hinge transport in disordered non-Hermitian systems deviates from the paradigm of the Hermitian case. Our numerical calculations prove the robustness of hinge states of disordered non-Hermitian 3DSOTIs. The mean transmission coefficients may or may not equal the number of chiral hinge channels, depending on the Hermiticity of chiral hinge states, while the fluctuations of transmission coefficients are always non-zero. Such fluctuations are not due to the broken chirality of hinge states but the incoherent scatterings of non-Hermitian potentials. The physics revealed here should also be true for one-dimensional chiral channels in topological materials that support chiral boundary states, such as Chern insulators, three-dimensional anomalous Hall insulators, and Weyl semimetals.
