论文标题
纳米级旋转阀元件的磁化逆转和磁化行为的计算研究
Computational Investigation of the Magnetization Reversal and Magnetoresistive Behaviour of Nanoscale Spin Valve Elements
论文作者
论文摘要
对各种物理参数（例如形状，元素大小，尺寸纵横比和阵列大小）的纳米级旋转阀元件（SV）的磁转换和磁磁性行为的研究至关重要。我们已经检查了纳米级SV元件（CO/CU/NI80FE20）和这些元素的阵列的磁切换机制和磁磁性行为，其中每个层的厚度为10 nm，矩形和椭圆形形状的厚度和椭圆形形状具有不同的横向纵横比（ARS）和基于eLlement间距的偏差。我们观察到，具有较高AR的元素显示了在高原中形成反平行状态的NI80FE20和CO层，类似于合成的抗fiferromagnets。对于较低的AR，观察到更复杂的准均匀磁微晶格，对于椭圆形元件而言，这更复杂。 AR为1.25的椭圆形元素显示出连贯且可预测的磁切换行为，证明了它们适当地整合到磁性记忆设备中。我们观察到随着AR的增加和元素间距的减小，磁阻（MR％）逐渐增加。磁通量密度随着元素间间距的增加而降低。
Investigation of the magnetic switching and magnetoresistive behaviour of nanoscale spin valve elements (SVs) of varying physical parameters such as shape, element size, dimensional aspect ratio, and array size is of vital importance for their application in future magnetic memory and storage devices. We have inspected the magnetic switching mechanism and magnetoresistive behaviour of nanoscale SV elements (Co/Cu/Ni80Fe20) and arrays of these elements, with each layer having a thickness of 10 nm and rectangular and elliptical shapes with varying lateral aspect ratios (ARs) and varying interelement spacing for the arrays, by finite difference method-based micromagnetic simulation. We observe that the elements with higher AR show the Ni80Fe20 and Co layers forming antiparallel states in the plateau, similar to synthetic antiferromagnets. For lower AR, more complex quasi-uniform magnetic microstates are observed, which are even more intricate for elliptical elements. The elliptical elements with an AR of 1.25 show coherent and predictable magnetic switching behaviour, demonstrating their appropriateness for integration into magnetic memory devices. We observe a gradual increase in magnetoresistance (MR%) with the increase in AR and the decrease in interelement spacing. The magnetic flux density experiences a reduction with an increase in the inter-elemental spacing.
