论文标题

在PDCOO $ _2 $薄膜的Matthiessen统治与Matthiessen统治的有效质量和偏差

Disorder-enhanced effective masses and deviations from Matthiessen's rule in PdCoO$_2$ thin films

论文作者

Barbalas, David, Legros, Anaëlle, Rimal, Gaurab, Oh, Seongshik, Armitage, N. P.

论文摘要

在金属delafossite pdcoo $ _2 $中观察到流体动力传输的观察增加了对这一高导电氧化物家族的兴趣,但是到目前为止,实验研究大多仅限于散装晶体。在这项工作中,PDCOO $ _2 $的高质量薄膜的开发使使用直流传输和时间域THZ光谱的膜厚度的电导率进行了彻底研究。随着膜的厚度从12 nm增加到102 nm,残余电阻率降低,我们在电阻率的温度依赖性中观察到与Matthiessen规则(DMR)的偏差很大。我们发现,通过单个drude项,复杂的THZ电导率非常适合。我们拟合数据以同时提取光谱重量和散射速率。发现Drude散射速率的温度依赖性几乎与残余电阻率无关,并且不能是观察到的DMR的主要机制。相反,我们观察到光谱重量的巨大变化,这是无序的函数,从最无序的膜变为最小无序的膜的变化1.5倍。我们认为,这对应于$ \ geq 2 $ $ \ geq 2 $倍的质量有效质量的价值,这会增加残留障碍。这表明在DC电阻率中观察到的DMR背后的机制主要是由电子质量变化驱动的。我们讨论了这种行为的可能起源,包括具有无效增强的电子散射的可能性,可以通过膜厚度系统地调节。

The observation of hydrodynamic transport in the metallic delafossite PdCoO$_2$ has increased interest in this family of highly conductive oxides, but experimental studies so far have mostly been confined to bulk crystals. In this work, the development of high-quality thin films of PdCoO$_2$ has enabled a thorough study of the conductivity as a function of film thickness using both dc transport and time-domain THz spectroscopy. With increasing film thickness from 12 nm to 102 nm, the residual resistivity decreases and we observe a large deviation from Matthiessen's rule (DMR) in the temperature dependence of the resistivity. We find that the complex THz conductivity is well fit by a single Drude term. We fit the data to extract the spectral weight and scattering rate simultaneously. The temperature dependence of the Drude scattering rate is found to be nearly independent of the residual resistivity and cannot be the primary mechanism for the observed DMR. Rather, we observe large changes in the spectral weight as a function of disorder, changing by a factor of 1.5 from the most disordered to least disordered films. We believe this corresponds to a mass enhancement of $\geq 2$ times the value of the bulk effective mass which increases with residual disorder. This suggests that the mechanism behind the DMR observed in dc resistivity is primarily driven by changes in the electron mass. We discuss the possible origins of this behavior including the possibility of disorder-enhanced electron-phonon scattering, which can be systematically tuned by film thickness.

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