论文标题
使用Veriloga的团队和VTEAM MEMRISTOR模型的数学建模
Mathematical Modelling of TEAM and VTEAM Memristor Model Using VerilogA
论文作者
论文摘要
任何关注巡回赛世界的人都会熟悉三个基本电路元件 - 电容器，电阻器和电感器。这些电路元件由四个基本电路变量中的两个之间的关系定义，电压，电荷和通量。然而，在1971年，莱昂·库阿（Leon Chua）教授以对称的为由提出，应该有第四个基本电路元件，该电路元素赋予通量与电荷之间的关系。他将其命名为Memristor，这是内存电阻的缩写。然后，该理论实际上进行了建模，2008年5月，HP Labs的研究人员发表了一篇论文，宣布了一个模型，以实现Memristor的物理实现。该报告主要关注Memristor及其应用的模型。可变电阻，灵活性，无泄漏电流和与CMO兼容的优点。元素回忆录显示出不同应用的不同特征，从而导致形成不同模型的Memristor。本文回顾了Memristor的不同模型。 Memristors设备可用于许多应用程序，例如内存，逻辑和神经形态系统。 Memristor的计算机模型将是分析电路行为以帮助开发此Memristor的应用的有用工具，是通过仿真的被动电路元素。在本文中，模拟了用于正弦输入的Memristor设备的各种Veriloga模型，并使用了各种窗口功能进行了验证。对各种备忘录模型的电路分析进行了
Anyone who looks into the circuitry world will be familiar with the three fundamental circuit elements - capacitor, resistor, and inductor. These circuit elements are defined by the relation between two of the four fundamental circuit variables current, voltage, charge, and flux. However, in 1971, Prof. Leon Chua proposed on the grounds of symmetry that there should be a fourth fundamental circuit element that gives the relation between flux and charge. He named this the memristor, which is short for memory resistor. This theory was then practicallymodeled, in May 2008 when the researchers at HP Labs published a paper announcing a model for a physical realization of a memristor. This report mainly focuses on the model of memristor and its applications. The advantages of variable resistance, flexibility, no leakage current, and compatibility with CMOS. The element memristor exhibits different characteristics for different applications which results in the formation of different models of the memristor. This paper gives a review of different models of the memristor. Memristors devices can be used in many applications such as memory, logic, and neuromorphic systems. A computer model of the memristor would be a useful tool for analyzing circuit behavior to help in developing the application of this memristor is a passive circuit element via simulation. In this paper, various VerilogA model of memristor devices are simulated for sinusoidal inputs and output are verified Various window functions has been used. The circuit analysis of the various memristor models is done
