论文标题
CRI3/MNBI2TE4 van der waals异质结构中的大型交换偏差效果和覆盖范围依赖界面耦合
Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures
论文作者
论文摘要
通过构建Van der Waals异质结构来点燃磁性拓扑绝缘子的磁磁有序可以帮助揭示新颖的量子状态和设计功能设备。在这里，我们观察到有趣的交换偏置效应，表明在CRI3/MNBI2TE4铁磁绝缘子/抗铁磁拓扑绝缘子（FMI/AFM-TI）异质结构中，表明成功的界面磁耦合。这些设备最初表现出负面交换偏置场，该场会随温度升高而衰减，并且不受后门电压的影响。当我们将设备配置更改为被CRI3半覆盖的设备配置时，交换偏置将呈正，而较大的交换偏置场超过300 mt。这种敏感的操作是通过FM和AFM耦合在CRI3和MNBI2TE4界面上的竞争来解释的，指出依赖覆盖范围的界面磁相互作用。我们的工作将促进拓扑和抗铁磁磁性设备的开发。
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.
