论文标题
在DC加热的SI（111）表面上发现的步骤束的预测通用类别类别
Predicted universality class of step bunching found on DC-heated Si(111) surfaces
论文作者
论文摘要
台阶的一致实验和数值研究是在部分充电Adatoms逐渐向下电迁移而产生的替代晶体表面上的一致实验和数值研究，证实了最小束距离$ l _ {\ rm min} $缩放距离的缩放依赖性的理论预测，并在bunch size $ n $：$ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ _} 2/3 $。在半导体，金属和介电材料的副面实验中观察到了所谓的尺寸尺寸指数$γ$的值。仔细的理论研究和数值计算预测$γ= 1/2 $的第二值。但是，从实验中仍未报告该值。我们在这里报告了相对于$γ= 1/2 $的通用类别中的步骤束实验性观察。这是通过监视Si（111） - 通过直接降低电流在〜1200 $^\ Circ $ c加热的升华（111）的过程中来实现的。在实验中，我们还测量了束数量的其他特征，例如$ n $中的平均步骤和平均束宽度$ W $。然后，我们将发现与已发表的实验和数值数据进行比较，以在普遍性类别上达到理论上一致的框架。我们研究的最终好处不仅是促进基本知识，而且还为替代纳米复制的自下而上的合成提供了进一步的指导。
Concerted experimental and numerical studies of step bunching on vicinal crystal surfaces resulting from step-down electromigration of partially charged adatoms, confirmed the theoretical prediction of scaling dependence of the minimal bunch distance $l_{\rm min}$ on the bunch size $N$: $l_{\rm min} \sim N^{-γ}$, with $γ= 2/3$. The value of the so called size-scaling exponent $γ$ was observed in experiments on vicinal surfaces of semiconducting, metallic, and dielectric materials. Careful theoretical investigations and numerical calculations predict a second value of $γ= 1/2$. However, this value is still not been reported from experiments. And we report here experimental observation of step bunching in the universality class relative to $γ= 1/2$. This is achieved by monitoring step flow during sublimation of Si(111)-vicinals heated by a direct step-down current at ~1200$^\circ$C. In the experiment we also measure other characteristic for the bunching quantities, such as the mean total number of steps in the bunch $N$ and the mean bunch width $W$. We then compare our findings with published experimental and numerical data to arrive at a theoretically consistent framework in terms of universality classes. The ultimate benefit of our study is not only to advance fundamental knowledge but also to provide further guidance for bottom-up synthesis of vicinal nanotemplates.
