论文标题
Terahertz振荡器芯片芯片与麦克风的后耦合芯片
Terahertz Oscillator Chips Backside-coupled to Unclad Microphotonics
论文作者
论文摘要
Terahertz技术在很大程度上取决于平面片上的天线，芯片天线通过底物向下辐射，因此，将这些天线与集成波导式连接到这些天线的有效手段是一个有吸引力的前景。我们提出了一种可行的方法，用于在Terahertz振荡器芯片和宽带全intrinsic-silicon介电波导之间进行背面耦合。我们的研究采用谐振隧道二极管作为紧凑的两端电子terahertz振荡器，从270 GHz到409 GHz观察到Terahertz波。通过弯曲的硅波导访问该功率的事实可以验证成功的背面耦合。
Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a viable methodology for backside coupling between a terahertz oscillator chip and a broadband all-intrinsic-silicon dielectric waveguide. Our investigation employs resonant tunneling diodes as compact two-terminal electronic terahertz oscillators, and terahertz waves are observed from 270 GHz to 409 GHz. The fact that this power is accessed via a curved length of silicon waveguide validates successful backside coupling.
