论文标题
MBE生长的未训练的抗铁磁cumnsb中的散装磁性特性
Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb
论文作者
论文摘要
详细研究了分子束外延生长条件对CumnSB膜在晶格匹配的胶水中的结构和磁性特征的影响。对于一组九个40〜nm厚的层,MN和SB通量的多种多样,以产生具有不同元素组成的材料。发现在相对Mn与SB通量比为$φ_ {\ text {Mn}} $/$φ_ {\ text {sb}} = 1.24 \ pm0.02 $的层生长的层,最接近néeel温度($ t _ texte {据信MN相关的结构缺陷是垂直晶格参数变化的驱动贡献。建立了最佳生长条件后,制造了第二组Cumnsb层厚度的样品在5至510 nm之间不等。我们表明,对于足够大的厚度,磁性特性($ t_ \ text {n} \ simeq62 $ k,curie -weiss温度$θ_\ text {cw} = -100 $ k)的stoichiemetric层的层确实与报道的Bulk Samples报道的参数相对应。另一方面,我们观察到$ t_ \ text {n} $的减少是我们最薄的层的cumnsb厚度的函数。此处报道的所有发现与旨在证明Néel载体切换和检测的研究特别相关,最近已提出,这是最近提出的。
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $Φ_{\text{Mn}}$/$Φ_{\text{Sb}}=1.24\pm0.02$ are closest to the stoichiometric composition, for which the Néel temperature ($T_\text{N}$) attains its maximum values. Mn-related structural defects are believed to be the driving contribution to changes in the vertical lattice parameter. Having established the optimum growth conditions, a second set of samples with CuMnSb layer thickness varied from 5 to 510 nm is fabricated. We show that for sufficiently large thicknesses, the magnetic characteristics ($T_\text{N}\simeq62$ K, Curie-Weiss temperature $Θ_\text{CW} = -100$ K) of the stoichiometric layers do correspond to the parameters reported for bulk samples. On the other hand, we observe a reduction of $T_\text{N}$ as a function of the CuMnSb thickness for our thinnest layers. All findings reported here are of particular relevance for studies aiming at the demonstration of Néel vector switching and detection in this noncentrosymmetric antiferromagnet, which have been recently proposed.