论文标题
外延单层连续大面积钼二硫化物生长的动力学和参数
Kinetics and Parameters of Epitaxial Monolayered Continuous large area Molybdenum disulfide Growth
论文作者
论文摘要
通过化学蒸气沉积（CVD）具有所需形态（CVD）的大型结晶石连续单层材料（例如钼二硫）（MOS $ _2 $）的生长仍然是一个挑战。在CVD中，各种因素的复杂相互作用，例如生长温度，前体和基板的性质决定了生长MOS $ _2 $单层单层的结晶度，结晶石大小和覆盖面积。在目前的工作中，我们报告了三氧化钼（MOO $ _3 $），硫和载体气流速对成核和单层生长的重量分数的作用。已经发现MOO $ _3 $重量分数的浓度可以控制自种过程，并决定影响形态和覆盖面积的成核位点的密度。 100 SCCM氩气的载气流量会导致覆盖面积较低（70％）的大型结晶石连续膜，而150 SCCM的流速则导致92％的覆盖面积，结晶石尺寸降低。通过实验参数的系统变化，我们已经建立了适合光电设备的大晶体原子薄膜生长的食谱。
The growth of large crystallite continuous monolayer materials like molybdenum disulfide (MoS$_2$) with desired morphology via chemical vapor deposition (CVD) remains a challenge. In CVD, the complex interplay of various factors like growth temperature, precursors, and nature of the substrate decides the crystallinity, crystallite size, and coverage area of the grown MoS$_2$ monolayer. In the present work, we report about the role of weight fraction of molybdenum trioxide (MoO$_3$), Sulfur, and carrier gas flow rate towards nucleation and monolayer growth. The concentration of MoO$_3$ weight fraction has been found to govern the self-seeding process and decides the density of nucleation sites affecting morphology and coverage area. Carrier gas flow of 100 sccm argon results into large crystallite continuous films with lower coverage area (70 %), while the flow rate of 150 sccm results into 92 % coverage area with reduced crystallite size. Through systematic variation of experimental parameters, we have established the recipe for the growth of large crystallite atomically thin MoS$_2$ suitable for optoelectronic devices.
