论文标题

在反应性HIPIMS沉积过程和退火后,在Reox薄膜中调整Reox薄膜中的rhenium氧化状态

Tailoring of rhenium oxidation state in ReOx thin films during reactive HiPIMS deposition process and following annealing

论文作者

Zubkins, M., Sarakovskis, A., Strods, E., Bikse, L., Polyakov, B., Kuzmin, A., Vibornijs, V., Purans, J.

论文摘要

大量三氧化物(REO3)具有异常高的电导率,并且纳米化具有有希望的催化特性。但是,由于难以稳定在6+氧化态下的rhenium,因此纯REO3薄膜的产生具有挑战性。在这里,我们提出了一种新的方法,用于使用在混合AR/O2大气中的金属rhenium靶标中使用反应性高功率脉冲磁子溅射(R-IPHIMS)的Reox(X = 1.6-2.9)薄膜的沉积方法。薄膜沉积在气体维持的自动释放状态中,根据当前波形在r-iphims过程中观察到。研究了底物温度,氧气与阿贡流量比和在空气中250°C下进行后的降临3小时对膜特性的影响。当在室温下沉积时,当在室温下沉积时,当沉积在纳米晶体\ b {eta} -Reo2相处时,将其沉积在室温下(150或250°C)时,具有X射线无定形结构(A-Reox)。在空气中退火时,无定形的A-Reox可以将晶格参数转换为3.75Å的结晶REO3。当使用升高的底物温度时,膜的表面形态是致密的,没有可检测的空隙。根据沉积参数,在膜表面上以不同比率观察到各种氧化态。所有样品均以10-3 Ohmxcm的阶和薄金属膜的光学特性的阶都表现出电阻率。

Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium in a 6+ oxidation state. Here we present a novel approach for the deposition of ReOx (x = 1.6-2.9) thin films using reactive high power impulse magnetron sputtering (r-HiPIMS) from a metallic rhenium target in a mixed Ar/O2 atmosphere. The thin films were deposited in the gas-sustained self-sputtering regime, observed during r-HiPIMS process according to current waveforms. The influence of the substrate temperature, the oxygen-to-argon flow ratio and post-annealing at 250 °C in the air for 3 h on the properties of the films were studied. The as-deposited films have an X-ray amorphous structure (a-ReOx) when deposited at room temperature while a nano-crystalline \b{eta}-ReO2 phase when deposited at elevated temperatures (150 or 250 °C). The amorphous a-ReOx can be converted into the crystalline ReO3 with a lattice parameter of 3.75 Å upon annealing in the air. The surface morphology of the films is dense without detectable voids when elevated substrate temperatures are used. Various Re oxidation states are observed on the surface of the films in different ratios depending on the deposition parameters. All samples exhibit electrical resistivity on the order of 10-3 Ohmxcm and optical properties typical for thin metallic films.

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