论文标题
Mose Mose的Moiré激子的电气调整$ _2 $ BiLayers
Electrical tuning of moiré excitons in MoSe$_2$ bilayers
论文作者
论文摘要
垂直堆叠的2D材料领域的最新进展显示出丰富的激子景观。特别是，已经证明了平面外电场可用于调整空间分离的层间激子的光谱位置。其他研究表明，激子状态存在强烈的杂交，这是由于两层电子状态的混合而产生的。然而，扭曲角度依赖性杂交与场诱导的能量转移之间的联系一直保持在黑暗中。在这里，我们在微观基础上调查了Mose $ _2 $同性恋者的Moiré激子的电和扭角调谐的相互作用。我们揭示了PL光谱中不同的能量区域，这些能量区域明显地由内层或中间激子，甚至是黑暗的激子。因此，我们预测了依赖于角角的临界电场，在这些临界电场中，材料从直接转化为间接半导体。我们的工作为实验可访问的旋钮提供了新的微观见解，以显着调整原子较薄的纳米材料中的Moiré激子物理学。
Recent advances in the field of vertically stacked 2D materials have revealed a rich exciton landscape. In particular, it has been demonstrated that out-of-plane electrical fields can be used to tune the spectral position of spatially separated interlayer excitons. Other studies have shown that there is a strong hybridization of exciton states, resulting from the mixing of electronic states in both layers. However, the connection between the twist-angle dependent hybridization and field-induced energy shifts has remained in the dark. Here, we investigate on a microscopic footing the interplay of electrical and twist-angle tuning of moiré excitons in MoSe$_2$ homobilayers. We reveal distinct energy regions in PL spectra that are clearly dominated by either intralayer or interlayer excitons, or even dark excitons. Consequently, we predict twist-angle-dependent critical electrical fields at which the material is being transformed from a direct into an indirect semiconductor. Our work provides new microscopic insights into experimentally accessible knobs to significantly tune the moiré exciton physics in atomically thin nanomaterials.
