论文标题
根据第一原理计算Cu $ | $金属接口处的旋转内存损失
Calculating the spin memory loss at Cu$|$metal interfaces from first principles
论文作者
论文摘要
界面在金属多层中所起的作用不仅是改变事件电子的动量;它们的对称性降低还导致了自旋轨道耦合的影响,特别是传导电子旋转的翻转。这导致通过金属界面显着降低自旋电流,该金属界面的定量为特征是无量纲参数$δ$称为旋转存储器损耗(SML)参数,这是散发金属的Spin-Flip扩散长度的界面对应物。在本文中,我们使用包括温度诱导的晶格和旋转障碍在内的第一原理散射计算,以系统地研究三个参数,这些参数通过使用PT,PD,PD,PY(Permalloy)和CO:界面电阻,自旋极化和SML的CU的金属界面来控制旋转传输。 Cu $ | $ pt接口的$δ$的值可与我们最近报告的Au $ | $ pt接口[Gupta {\ it等人},Phys Phys。莱特牧师。 124,087702(2020)]。对于Cu $ | $ py和Cu $ | $ CO界面,$δ$随着温度升高而单调降低,在室温下变小。计算的结果与文献中当前可用的实验值非常吻合。插入PT和PY或CO层之间的CU层稍微增加了这些“化合物”接口处的总自旋电流耗散。
The role played by interfaces in metallic multilayers is not only to change the momenta of incident electrons; their symmetry lowering also results in an enhancement of the effects of spin-orbit coupling, in particular the flipping of the spins of conduction electrons. This leads to a significant reduction of a spin current through a metallic interface that is quantitatively characterized by a dimensionless parameter $δ$ called the spin memory loss (SML) parameter, the interface counterpart of the spin-flip diffusion length for bulk metals. In this paper we use first-principles scattering calculations that include temperature-induced lattice and spin disorder to systematically study three parameters that govern spin transport through metallic interfaces of Cu with Pt, Pd, Py (permalloy) and Co: the interface resistance, spin polarization and the SML. The value of $δ$ for a Cu$|$Pt interface is found to be comparable to what we recently reported for a Au$|$Pt interface [Gupta {\it et al.}, Phys. Rev. Lett. 124, 087702 (2020)]. For Cu$|$Py and Cu$|$Co interfaces, $δ$ decreases monotonically with increasing temperature to become negligibly small at room temperature. The calculated results are in good agreement with currently available experimental values in the literature. Inserting a Cu layer between Pt and the Py or Co layers slightly increases the total spin current dissipation at these "compound" interfaces.