论文标题
从分层材料中的自由载体 - 外激体散射对激子宽度的贡献：H-BN的示例
Contribution to Excitonic Linewidth from Free Carrier-Exciton Scattering in Layered Materials: The example of h-BN
论文作者
论文摘要
自由载体对激子的散射是一种现象，当在低温实验中考虑中度掺杂到掺杂的半导体时，它尤其重要，在低温实验中，激子与声音和光学声子的相互作用降低。在本文中，我们考虑了由介质介质封装的单层六边形硼硼中游离载体散射激子的散射。我们通过变异波函数描述激子状态，通过rytova-keldysh电位对静电相互作用进行建模。还考虑了弹性散射和非弹性散射之间的区别，还考虑了激子状态之间的每个转变的相关性。最后，我们讨论了游离载体散射对激子宽度的贡献，分析了其温度和载体密度依赖性。
Scattering of excitons by free carriers is a phenomena which is especially important when considering moderately to heavily doped semiconductors in low temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering of excitons by free carriers in monolayer hexagonal Boron Nitride encapsulated by a dielectric medium. We describe the excitonic states by variational wave functions, modeling the electrostatic interaction via the Rytova--Keldysh potential. Making the distinction between elastic and inelastic scattering, the relevance of each transition between excitonic states is also considered. Finally, we discuss the contribution of free carrier scattering to the excitonic linewidth, analyzing both its temperature and carrier density dependence.
